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PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 -- 30 October 2008 Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients. The devices may also be used for unidirectional ESD protection of up to two signal lines.
Table 1. Product overview Package NXP PESD5V0X1BQ PESD5V0X1BT SOT663 SOT23 JEDEC TO-236AB ultra small and flat lead very small Package configuration
Type number
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 9 kV I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD) two lines I Ultra low diode capacitance: Cd = 0.9 pF I AEC-Q101 qualified I Very low leakage current: IRM = 1 nA
1.3 Applications
I USB interfaces I I I I I Antenna protection Radio Frequency (RF) protection 10/100/1000 Mbit/s Ethernet FireWire Asymmetric Digital Subscriber Line (ADSL) I High-speed data lines I Subscriber Identity Module (SIM) card protection I Computers, peripherals and printers I Cellular handsets and accessories I Portable electronics I Communication systems I Audio and video equipment
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Per diode VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V
[1] [2]
Parameter
Conditions
Min -
Typ 0.9 2
Max 5 1.3 2.6
Unit V pF pF
[1] [2]
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common anode
3 3
Simplified outline
Graphic symbol
PESD5V0X1BQ
1
2
1
2
006aaa154
PESD5V0X1BT 1 2 3 cathode (diode 1) cathode (diode 2) common anode
1 2 3 3
1
2
006aaa154
3. Ordering information
Table 4. Ordering information Package Name PESD5V0X1BQ PESD5V0X1BT Description plastic surface-mounted package; 3 leads plastic surface-mounted package; 3 leads Version SOT663 SOT23 Type number
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
2 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
4. Marking
Table 5. Marking codes Marking code[1] E6 U3* Type number PESD5V0X1BQ PESD5V0X1BT
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Tj Tamb Tstg junction temperature ambient temperature storage temperature -55 -65 150 +150 +150 C C C Parameter Conditions Min Max Unit
Table 7. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Per diode VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model)
[1] Device stressed with ten non-repetitive ESD pulses.
[1]
Parameter
Conditions
Min -
Max 9 10
Unit kV kV
Table 8. Standard Per diode
ESD standards compliance Conditions > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
3 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
001aaa631
IPP 100 % 90 %
10 % tr = 0.7 ns to 1 ns 30 ns 60 ns t
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 9. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Per diode VRWM IRM VBR Cd reverse standoff voltage reverse leakage current VRWM = 5 V breakdown voltage diode capacitance IR = 5 mA f = 1 MHz VR = 0 V VR = 5 V rdif
[1] [2]
[1] [2] [1] [2]
Conditions
Min 5.8 -
Typ 1 7.5 0.9 2 0.8 1.7 -
Max 5 100 9.5 1.3 2.6 1.2 2.3 100
Unit V nA V pF pF pF pF
differential resistance
IR = 1 mA
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
4 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.0 Cd (pF) 0.96
006aab249
2.0 Cd (pF) 1.9
006aab348
0.92 1.8 0.88
1.7 0.84
0.80 0 1 2 3 4 VR (V) 5
1.6 0 1 2 3 4 VR (V) 5
bidirectional configuration f = 1 MHz; Tamb = 25 C
unidirectional configuration f = 1 MHz; Tamb = 25 C
Fig 2.
Diode capacitance as a function of reverse voltage; typical values
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
I
IPP
-VCL -VBR -VRWM
IR IRM -IRM -IR VRWM VBR VCL
-VCL -VBR -VRWM -IRM -IR - - P-N +
V
+
-IPP
006aaa676
-IPP
006aaa407
Fig 4.
V-I characteristics for a bidirectional ESD protection diode
Fig 5.
V-I characteristics for a unidirectional ESD protection diode
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
5 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
ESD TESTER
RZ 450 RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
CZ
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
DUT (DEVICE UNDER TEST)
vertical scale = 2 kV/div horizontal scale = 15 ns/div
vertical scale = 20 V/div horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div horizontal scale = 15 ns/div GND GND
vertical scale = 20 V/div horizontal scale = 100 ns/div
unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2
006aab336
Fig 6.
ESD clamping test setup and waveforms
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
6 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0X1BQ and PESD5V0X1BT are designed for the protection of one bidirectional data or signal line from the damage caused by ESD. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. PESD5V0X1BQ and PESD5V0X1BT may also be used for the protection of two unidirectional data or signal lines, which have positive signal polarities with respect to ground.
line 1 to be protected
line 1 to be protected line 2 to be protected
DUT GND
DUT GND
bidirectional protection of one line
unidirectional protection of two lines
006aab252
Fig 7.
Application diagram
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT). The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
7 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
9. Package outline
1.7 1.5 3 0.3 0.1 1.7 1.5 1.3 1.1
0.6 0.5
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1 0.5 1 Dimensions in mm
2 0.33 0.23 0.18 0.08 02-05-21
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 8.
Package outline PESD5V0X1BQ (SOT663)
Fig 9.
Package outline PESD5V0X1BT (SOT23/TO-236AB)
10. Packing information
Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD5V0X1BQ PESD5V0X1BT
[1]
Package SOT663 SOT23
Description 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -215 4000 -115 8000 -315 10000 -235
For further information and the availability of packing methods, see Section 14.
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
8 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
11. Soldering
2.45 1.9 1.6
0.5 0.55 0.6 (3x) (3x) (3x) 2 0.8 1
solder lands placement area solder paste occupied area Dimensions in mm
1.65 0.5 (3x) 0.55 (3x)
sot663_fr
Reflow soldering is the only recommended soldering method.
Fig 10. Reflow soldering footprint PESD5V0X1BQ (SOT663)
3.3 2.9 1.9
solder lands solder resist 3 1.7 2 solder paste 0.6 (3x) occupied area Dimensions in mm 0.5 (3x) 0.6 (3x) 1
sot023_fr
0.7 (3x)
Fig 11. Reflow soldering footprint PESD5V0X1BT (SOT23/TO-236AB)
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
9 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
2.2 1.2 (2x)
1.4 (2x) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4
preferred transport direction during soldering 2.8 4.5
sot023_fw
Fig 12. Wave soldering footprint PESD5V0X1BT (SOT23/TO-236AB)
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
10 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
12. Revision history
Table 11. Revision history Release date Data sheet status Product data sheet Change notice Supersedes Document ID
PESD5V0X1BQ_PESD5V0X1BT_1 20081030
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
11 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ESD protection devices -- These products are only intended for protection against ElectroStatic Discharge (ESD) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. NXP Semiconductors accepts no liability for use in such applications and therefore such use is at the customer's own risk.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0X1BQ_PESD5V0X1BT_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 30 October 2008
12 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 October 2008 Document identifier: PESD5V0X1BQ_PESD5V0X1BT_1

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